2SA1943 TOSHIBA Transistor Silicon PNP




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2SA1943 TOSHIBA Transistor Silicon PNP datasheet PDF

The 2SA1943, TOSHIBA Transistor Silicon PNP
2sa1943 circuit diagram
Power amplifier applications 2SA1943 TOSHIBA transistor silicon PNP High breakdown voltage: VCEO = -230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).